INTERBAND OPTICAL TRANSITIONS IN EXTREMELY ANISOTROPIC SEMICONDUCTORS .2. COEXISTENCE OF EXCITON AND LANDAU LEVELS

被引:157
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AKIMOTO, O
HASEGAWA, H
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10.1143/JPSJ.22.181
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O4 [物理学];
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0702 ;
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页码:181 / &
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共 16 条
[1]  
Aoyagi K., 1966, P INT C SEMICONDUCTO, P174
[2]  
BYRD PF, 1954, HANDBOOK ELLIPTIC IN
[3]   INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J].
ELLIOTT, RJ .
PHYSICAL REVIEW, 1957, 108 (06) :1384-1389
[4]   THEORY OF THE ABSORPTION EDGE IN SEMICONDUCTORS IN A HIGH MAGNETIC FIELD [J].
ELLIOTT, RJ ;
LOUDON, R .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (3-4) :196-207
[5]  
Froman N., 1965, CONTRIBUTIONS THEORY, V1st
[6]   OPTICAL ABSORPTION SPECTRUM OF HYDROGENIC ATOMS IN A STRONG MAGNETIC FIELD [J].
HASEGAWA, H ;
HOWARD, RE .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 21 (3-4) :179-198
[7]   COEXISTENCE OF EXCITON AND LANDAU LEVELS [J].
HASEGAWA, H ;
HANAMURA, F .
PHYSICS LETTERS, 1965, 19 (05) :378-&
[8]  
Kemble EC., 1937, FUNDAMENTAL PRINCIPL
[9]   THEORY OF DONOR STATES IN SILICON [J].
KOHN, W ;
LUTTINGER, JM .
PHYSICAL REVIEW, 1955, 98 (04) :915-922
[10]   Wave mechanics and half-integral quantisation [J].
Kramers, HA .
ZEITSCHRIFT FUR PHYSIK, 1926, 39 (10/11) :828-840