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MODIFICATIONS TO THE BOONTON-72BD CAPACITANCE METER FOR DEEP-LEVEL TRANSIENT SPECTROSCOPY APPLICATIONS
被引:20
作者
:
CHAPPELL, TI
论文数:
0
引用数:
0
h-index:
0
CHAPPELL, TI
RANSOM, CM
论文数:
0
引用数:
0
h-index:
0
RANSOM, CM
机构
:
来源
:
REVIEW OF SCIENTIFIC INSTRUMENTS
|
1984年
/ 55卷
/ 02期
关键词
:
D O I
:
10.1063/1.1137716
中图分类号
:
TH7 [仪器、仪表];
学科分类号
:
0804 ;
080401 ;
081102 ;
摘要
:
引用
收藏
页码:200 / 203
页数:4
相关论文
共 4 条
[1]
FELGER H, COMMUNICATION
[2]
MEASUREMENT OF SEMICONDUCTOR INSULATOR INTERFACE STATES BY CONSTANT-CAPACITANCE, DEEP-LEVEL TRANSIENT SPECTROSCOPY
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
JOHNSON, NM
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1982,
21
(02):
: 303
-
314
[3]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
: 3023
-
3032
[4]
16 BOONT APPL NOT
←
1
→
共 4 条
[1]
FELGER H, COMMUNICATION
[2]
MEASUREMENT OF SEMICONDUCTOR INSULATOR INTERFACE STATES BY CONSTANT-CAPACITANCE, DEEP-LEVEL TRANSIENT SPECTROSCOPY
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
JOHNSON, NM
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1982,
21
(02):
: 303
-
314
[3]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
: 3023
-
3032
[4]
16 BOONT APPL NOT
←
1
→