SOLUBILITY EFFECTS OF IMPLANTED IONS IN SEMICONDUCTORS

被引：15

作者：

MARSH, OJ

MAYER, JW

SHIFRIN, GA

JAMBA, D

机构：

来源：

APPLIED PHYSICS LETTERS | 1967年 / 11卷 / 03期

关键词：

D O I：

10.1063/1.1755050

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：92 / &

共 16 条

[1]

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DAVIES, JA ;

BROWN, F ;

BALL, GC ;

DOMEIJ, B .

CANADIAN JOURNAL OF PHYSICS, 1964, 42 (06) :1070-&

[3]

DAVIES JV, TO BE PUBLISHED

[4] ANALYSIS OF SB-IMPLANTED SILICON BY (P P) SCATTERING AND HALL MEASUREMENTS [J].

ERIKSSON, L ;

DAVIES, JA ;

DENHARTOG, J ;

MAYER, JW ;

MARSH, OJ ;

MARKARIOUS, R .

APPLIED PHYSICS LETTERS, 1967, 10 (11) :323-+

[5]

HIRAKI A, 1967, B AM PHYS SOC, V12, P346

[6]

JAMBA D, TO BE PUBLISHED

[7]

Lindhard J., 1963, MAT FYS MEDD K DAN V, V33, P31

[8]

MARSH OJ, TO BE PUBLISHED

[9] SOLUBILITY OF SODIUM IN SILICON [J].

MCCALDIN, JO ;

LITTLE, MJ ;

WIDMER, AE .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (07) :1119-&

[10] SILICON HEAVILY DOPED BY ENERGETIC CESIUM IONS [J].

MCCALDIN, JO ;

WIDMER, AE .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (09) :1073-&

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