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CHEMICAL-BOUNDARY LAYERS IN (MO)CVD
被引:9
作者
:
DECROON, MHJM
论文数:
0
引用数:
0
h-index:
0
DECROON, MHJM
GILING, LJ
论文数:
0
引用数:
0
h-index:
0
GILING, LJ
机构
:
来源
:
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
|
1989年
/ 19卷
/ 1-2期
关键词
:
D O I
:
10.1016/0146-3535(89)90018-X
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:125 / 136
页数:12
相关论文
共 22 条
[11]
COMPLEX FLOW PHENOMENA IN MOCVD REACTORS .1. HORIZONTAL REACTORS
[J].
MOFFAT, H
论文数:
0
引用数:
0
h-index:
0
MOFFAT, H
;
JENSEN, KF
论文数:
0
引用数:
0
h-index:
0
JENSEN, KF
.
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
:108
-119
[12]
GAS-PHASE AND SURFACE-REACTIONS IN SI DOPING OF GAAS BY SILANES
[J].
MOFFAT, HK
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
MOFFAT, HK
;
KUECH, TF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
KUECH, TF
;
JENSEN, KF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
JENSEN, KF
;
WANG, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
WANG, PJ
.
JOURNAL OF CRYSTAL GROWTH,
1988,
93
(1-4)
:594
-601
[13]
3-DIMENSIONAL FLOW EFFECTS IN SILICON CVD IN HORIZONTAL REACTORS
[J].
MOFFAT, HK
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Minnesota, Minneapolis, MN,, USA, Univ of Minnesota, Minneapolis, MN, USA
MOFFAT, HK
;
JENSEN, KF
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Minnesota, Minneapolis, MN,, USA, Univ of Minnesota, Minneapolis, MN, USA
JENSEN, KF
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1988,
135
(02)
:459
-471
[14]
BORON DOPING EFFECT ON SILICON FILM DEPOSITION IN THE SI2H6-B2H6-HE GAS SYSTEM
[J].
NAKAYAMA, S
论文数:
0
引用数:
0
h-index:
0
机构:
NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
NAKAYAMA, S
;
KAWASHIMA, I
论文数:
0
引用数:
0
h-index:
0
机构:
NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
KAWASHIMA, I
;
MUROTA, J
论文数:
0
引用数:
0
h-index:
0
机构:
NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
MUROTA, J
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1986,
133
(08)
:1721
-1724
[15]
OUAZZANI J, 1988, J CRYST GROWTH, V91, P479
[16]
DEPOSITION OF GAAS EPITAXIAL LAYERS BY ORGANOMETALLIC CVD - TEMPERATURE AND ORIENTATION DEPENDENCE
[J].
REEP, DH
论文数:
0
引用数:
0
h-index:
0
REEP, DH
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(03)
:675
-680
[17]
ON 3-DIMENSIONAL TRANSPORT PHENOMENA IN CVD PROCESSES
[J].
RHEE, S
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139
MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139
RHEE, S
;
SZEKELY, J
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139
MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139
SZEKELY, J
;
ILEGBUSI, OJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139
MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139
ILEGBUSI, OJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1987,
134
(10)
:2552
-2559
[18]
GROWTH-RATE OF GAAS EPITAXIAL-FILMS GROWN BY MOCVD
[J].
SATO, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
SATO, M
;
SUZUKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
SUZUKI, M
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1987,
134
(06)
:1540
-1548
[19]
DIFFUSIVITY AND THERMAL-CRACKING RATE OF METALORGANIC GASES BY CHROMATOGRAPHY
[J].
SUZUKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Tokyo, Inst of Industrial, Science, Tokyo, Jpn, Univ of Tokyo, Inst of Industrial Science, Tokyo, Jpn
SUZUKI, M
;
SATO, M
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Tokyo, Inst of Industrial, Science, Tokyo, Jpn, Univ of Tokyo, Inst of Industrial Science, Tokyo, Jpn
SATO, M
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1985,
132
(07)
:1684
-1688
[20]
KINETIC SIMULATION OF GAS-PHASE REACTIONS IN MOVPE GROWTH
[J].
TANAKA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Lab Ltd, Japan
TANAKA, H
;
KOMENO, J
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Lab Ltd, Japan
KOMENO, J
.
JOURNAL OF CRYSTAL GROWTH,
1988,
93
(1-4)
:115
-119
←
1
2
3
→
共 22 条
[11]
COMPLEX FLOW PHENOMENA IN MOCVD REACTORS .1. HORIZONTAL REACTORS
[J].
MOFFAT, H
论文数:
0
引用数:
0
h-index:
0
MOFFAT, H
;
JENSEN, KF
论文数:
0
引用数:
0
h-index:
0
JENSEN, KF
.
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
:108
-119
[12]
GAS-PHASE AND SURFACE-REACTIONS IN SI DOPING OF GAAS BY SILANES
[J].
MOFFAT, HK
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
MOFFAT, HK
;
KUECH, TF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
KUECH, TF
;
JENSEN, KF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
JENSEN, KF
;
WANG, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
WANG, PJ
.
JOURNAL OF CRYSTAL GROWTH,
1988,
93
(1-4)
:594
-601
[13]
3-DIMENSIONAL FLOW EFFECTS IN SILICON CVD IN HORIZONTAL REACTORS
[J].
MOFFAT, HK
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Minnesota, Minneapolis, MN,, USA, Univ of Minnesota, Minneapolis, MN, USA
MOFFAT, HK
;
JENSEN, KF
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Minnesota, Minneapolis, MN,, USA, Univ of Minnesota, Minneapolis, MN, USA
JENSEN, KF
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1988,
135
(02)
:459
-471
[14]
BORON DOPING EFFECT ON SILICON FILM DEPOSITION IN THE SI2H6-B2H6-HE GAS SYSTEM
[J].
NAKAYAMA, S
论文数:
0
引用数:
0
h-index:
0
机构:
NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
NAKAYAMA, S
;
KAWASHIMA, I
论文数:
0
引用数:
0
h-index:
0
机构:
NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
KAWASHIMA, I
;
MUROTA, J
论文数:
0
引用数:
0
h-index:
0
机构:
NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
MUROTA, J
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1986,
133
(08)
:1721
-1724
[15]
OUAZZANI J, 1988, J CRYST GROWTH, V91, P479
[16]
DEPOSITION OF GAAS EPITAXIAL LAYERS BY ORGANOMETALLIC CVD - TEMPERATURE AND ORIENTATION DEPENDENCE
[J].
REEP, DH
论文数:
0
引用数:
0
h-index:
0
REEP, DH
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(03)
:675
-680
[17]
ON 3-DIMENSIONAL TRANSPORT PHENOMENA IN CVD PROCESSES
[J].
RHEE, S
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139
MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139
RHEE, S
;
SZEKELY, J
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139
MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139
SZEKELY, J
;
ILEGBUSI, OJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139
MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139
ILEGBUSI, OJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1987,
134
(10)
:2552
-2559
[18]
GROWTH-RATE OF GAAS EPITAXIAL-FILMS GROWN BY MOCVD
[J].
SATO, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
SATO, M
;
SUZUKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
SUZUKI, M
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1987,
134
(06)
:1540
-1548
[19]
DIFFUSIVITY AND THERMAL-CRACKING RATE OF METALORGANIC GASES BY CHROMATOGRAPHY
[J].
SUZUKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Tokyo, Inst of Industrial, Science, Tokyo, Jpn, Univ of Tokyo, Inst of Industrial Science, Tokyo, Jpn
SUZUKI, M
;
SATO, M
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Tokyo, Inst of Industrial, Science, Tokyo, Jpn, Univ of Tokyo, Inst of Industrial Science, Tokyo, Jpn
SATO, M
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1985,
132
(07)
:1684
-1688
[20]
KINETIC SIMULATION OF GAS-PHASE REACTIONS IN MOVPE GROWTH
[J].
TANAKA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Lab Ltd, Japan
TANAKA, H
;
KOMENO, J
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Lab Ltd, Japan
KOMENO, J
.
JOURNAL OF CRYSTAL GROWTH,
1988,
93
(1-4)
:115
-119
←
1
2
3
→