ORDERED GAINP BY ATOMIC LAYER EPITAXY

被引：15

作者：

MCDERMOTT, BT ^{[1
]}

ELMASRY, NA ^{[1
]}

JIANG, BL ^{[1
]}

HYUGA, F ^{[1
]}

BEDAIR, SM ^{[1
]}

DUNCAN, WM ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75265

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90440-G

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the successful growth of both ordered and disordered GaInP by atomic layer epitaxy on GaAs substrate. Photoluminescence and transmission electron microscopy are used to characterize the ordering. The composition of the GaInP was self-regulating; close lattice-matching to the substrate was observed for the range of fluxes used in this study. Double crystal X-ray diffraction is used to give indications of the important growth parameters necessary for the self-regulation of the composition. The quality of the atomic layer epitaxy grown material is assessed in a preliminary investigation of GaInP/GaAs/GaInP quantum wells.

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收藏

页码：96 / 101

页数：6

相关论文

共 22 条

[1] ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J].

ASAI, H ;

OE, K .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2052-2056

[2] CONDUCTION-BAND AND VALENCE-BAND OFFSETS IN GAAS/GA0.51IN0.49P SINGLE QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BISWAS, D ;

DEBBAR, N ;

BHATTACHARYA, P ;

RAZEGHI, M ;

DEFOUR, M ;

OMNES, F .

APPLIED PHYSICS LETTERS, 1990, 56 (09) :833-835

[3]

CHAN YJ, 1989, I PHY SC SER, V96, P459

[4] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INDIUM-PHOSPHIDE BY PULSING PRECURSORS [J].

CHEN, WK ;

CHEN, JC ;

ANTHONY, L ;

LIU, PL .

APPLIED PHYSICS LETTERS, 1989, 55 (10) :987-989

[5] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE [J].

GOMYO, A ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

SUZUKI, T ;

YUASA, T .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :367-373

[6] GAINP MASS-TRANSPORT AND GAINP/GAAS BURIED-HETEROSTRUCTURE LASERS [J].

GROVES, SH ;

LIAU, ZL ;

PALMATEER, SC ;

WALPOLE, JN .

APPLIED PHYSICS LETTERS, 1990, 56 (04) :312-314

[7] HIGH-QUALITY QUANTUM WELLS OF INGAP GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

HAFICH, MJ ;

QUIGLEY, JH ;

OWENS, RE ;

ROBINSON, GY ;

LI, D ;

OTSUKA, N .

APPLIED PHYSICS LETTERS, 1989, 54 (26) :2686-2688

[8] BAND LINEUP FOR A GAINP/GAAS HETEROJUNCTION MEASURED BY A HIGH-GAIN NPN HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KOBAYASHI, T ;

TAIRA, K ;

NAKAMURA, F ;

KAWAI, H .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) :4898-4902

[9] ATOMIC LAYER EPITAXY OF GAINP ORDERED ALLOY [J].

MCDERMOTT, BT ;

REID, KG ;

ELMASRY, NA ;

BEDAIR, SM ;

DUNCAN, WM ;

YIN, X ;

POLLAK, FH .

APPLIED PHYSICS LETTERS, 1990, 56 (12) :1172-1174

[10]

OLSEN JM, 1989, APPL PHYS LETT, V55, P1208