NANOSECOND SINGLE-PHOTON TIMING WITH INGAAS/INP PHOTODIODES

被引：24

作者：

ZAPPA, F ^{[1
]}

LACAITA, A ^{[1
]}

COVA, S ^{[1
]}

WEBB, P ^{[1
]}

机构：

[1] EG&G CANADA LTD,DIV OPTOELECTR,VAUDREUIL J7V 8P7,PQ,CANADA

来源：

OPTICS LETTERS | 1994年 / 19卷 / 11期

关键词：

D O I：

10.1364/OL.19.000846

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate that separate absorption and multiplication InGaAs/InP avalanche photodiodes can work biased above the breakdown voltage and detect the arrival tame of single photons with 1-ns resolution and a noise-equivalent power of 1 x 10(-14) W/Hz1/2 at 150 K. We investigated the performance of various samples, cooling the detectors from different temperatures down to 50 K. These devices are suitable for the detection of short optical pulses in the near-infrared range up to a 1.55-mum wavelength, for the characterization of optical communication components, and for luminescence and radiative

引用

页码：846 / 848

页数：3

共 9 条

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