HYDROGEN CONTENT DEPENDENCE OF THE OPTICAL-ENERGY GAP IN A-SI-H

被引:20
作者
HAMA, T
OKAMOTO, H
HAMAKAWA, Y
MATSUBARA, T
机构
[1] OSAKA UNIV,FAC ENGN,OSAKA 560,JAPAN
[2] KYOTO UNIV,DEPT PHYS,KYOTO 606,JAPAN
关键词
D O I
10.1016/0022-3093(83)90588-4
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:333 / 336
页数:4
相关论文
共 7 条
[1]   INTERBAND ABSORPTION-SPECTRA OF DISORDERED SEMICONDUCTORS IN THE COHERENT POTENTIAL APPROXIMATION [J].
ABE, S ;
TOYOZAWA, Y .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1981, 50 (07) :2185-2194
[2]   QUANTUM WELL MODEL OF HYDROGENATED AMORPHOUS-SILICON [J].
BRODSKY, MH .
SOLID STATE COMMUNICATIONS, 1980, 36 (01) :55-59
[3]  
COHEN MH, 1980, J NONCRYST SOLIDS, V35, P781
[4]   PREPARATION OF HIGHLY PHOTOCONDUCTIVE AMORPHOUS SILICON BY RF SPUTTERING [J].
MOUSTAKAS, TD ;
ANDERSON, DA ;
PAUL, W .
SOLID STATE COMMUNICATIONS, 1977, 23 (03) :155-158
[5]   CALCULATIONS OF THE ELECTRONIC-PROPERTIES OF HYDROGENATED SILICON [J].
PAPACONSTANTOPOULOS, DA ;
ECONOMOU, EN .
PHYSICAL REVIEW B, 1981, 24 (12) :7233-7246
[6]   INFLUENCE OF DISORDER ON THE ELECTRONIC-STRUCTURE OF AMORPHOUS-SILICON [J].
SINGH, J .
PHYSICAL REVIEW B, 1981, 23 (08) :4156-4168
[7]   PHOTOEMISSION-STUDIES ON INSITU PREPARED HYDROGENATED AMORPHOUS-SILICON FILMS [J].
VONROEDERN, B ;
LEY, L ;
CARDONA, M ;
SMITH, FW .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 40 (06) :433-450