TUNABLE ELECTROLUMINESCENCE IN GAAS-DOPING MULTILAYER STRUCTURES

[1] ABSTREITER G, 1984, SPRINGER SERIES SOLI, V53, P232

[2] OBSERVATION OF TUNABLE BAND-GAP AND TWO-DIMENSIONAL SUBBANDS IN A NOVEL GAAS SUPER-LATTICE [J]. PHYSICAL REVIEW LETTERS, 1981, 47 (12) : 864 - 867

[3] PHOTO-LUMINESCENCE STUDY OF ELECTRON-HOLE RECOMBINATION ACROSS THE TUNABLE EFFECTIVE GAP IN GAAS N-I-P-I SUPER-LATTICES [J]. SOLID STATE COMMUNICATIONS, 1982, 43 (04) : 291 - 294

[4] KIRCHSTETTER H, UNPUB APPL PHYS

[5] KUNZEL H, 1982, APPL PHYS LETT, V41, P852, DOI 10.1063/1.93717

[6] COMPOSITIONAL AND DOPING SUPER-LATTICES IN III-V-SEMICONDUCTORS [J]. ADVANCES IN PHYSICS, 1983, 32 (03) : 285 - 359

[7] QUASI-2-DIMENSIONAL PHOTO-EXCITED CARRIERS IN GAAS DOPING SUPER-LATTICES [J]. PHYSICAL REVIEW B, 1982, 26 (04): : 2124 - 2132

[1] ABSTREITER G, 1984, SPRINGER SERIES SOLI, V53, P232

[2] OBSERVATION OF TUNABLE BAND-GAP AND TWO-DIMENSIONAL SUBBANDS IN A NOVEL GAAS SUPER-LATTICE [J]. PHYSICAL REVIEW LETTERS, 1981, 47 (12) : 864 - 867

[3] PHOTO-LUMINESCENCE STUDY OF ELECTRON-HOLE RECOMBINATION ACROSS THE TUNABLE EFFECTIVE GAP IN GAAS N-I-P-I SUPER-LATTICES [J]. SOLID STATE COMMUNICATIONS, 1982, 43 (04) : 291 - 294

[4] KIRCHSTETTER H, UNPUB APPL PHYS

[5] KUNZEL H, 1982, APPL PHYS LETT, V41, P852, DOI 10.1063/1.93717

[6] COMPOSITIONAL AND DOPING SUPER-LATTICES IN III-V-SEMICONDUCTORS [J]. ADVANCES IN PHYSICS, 1983, 32 (03) : 285 - 359

[7] QUASI-2-DIMENSIONAL PHOTO-EXCITED CARRIERS IN GAAS DOPING SUPER-LATTICES [J]. PHYSICAL REVIEW B, 1982, 26 (04): : 2124 - 2132