VISIBLE-BLIND ULTRAVIOLET PHOTODETECTORS BASED ON GAN P-N-JUNCTIONS

被引：80

作者：

CHEN, Q

KHAN, MA

SUN, CJ

YANG, JW

机构：

[1] APA Optics, Inc., Blaine, MN 55434

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 20期

关键词：

GALLIUM NITRIDE; PHOTODIODES; PHOTOVOLTAIC CELLS;

D O I：

10.1049/el:19951190

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Visible-blind ultraviolet photodetectors based on GaN p-n junctions are reported. These detectors have an abrupt long-wavelength cutoff wavelength at similar to 370nm and responsivity values as high as 0.09 A/W at 360nm. The rise and fall times were measured to be 300 mu s at 325nm.

引用

页码：1781 / 1782

页数：2

共 3 条

[1] VIOLET-BLUE GAN HOMOJUNCTION LIGHT-EMITTING-DIODES WITH RAPID THERMAL ANNEALED P-TYPE LAYERS
KHAN, MA
CHEN, Q
SKOGMAN, RA
KUZNIA, JN
[J]. APPLIED PHYSICS LETTERS, 1995, 66 (16) : 2046 - 2047
[2] HIGH-RESPONSIVITY PHOTOCONDUCTIVE ULTRAVIOLET SENSORS BASED ON INSULATING SINGLE-CRYSTAL GAN EPILAYERS
KHAN, MA
KUZNIA, JN
OLSON, DT
VANHOVE, JM
BLASINGAME, M
REITZ, LF
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (23) : 2917 - 2919
[3] SCHOTTKY-BARRIER PHOTODETECTOR BASED ON MG-DOPED P-TYPE GAN FILMS
KHAN, MA
KUZNIA, JN
OLSON, DT
BLASINGAME, M
BHATTARAI, AR
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (18) : 2455 - 2456

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