ELECTRICAL-PROPERTIES OF ZNXCD1-XSE

被引:9
作者
ALBASSAM, A
BRINKMAN, AW
RUSSELL, GJ
WOODS, J
机构
[1] Univ of Durham, Durham, Engl, Univ of Durham, Durham, Engl
关键词
D O I
10.1016/0022-0248(90)90792-J
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
11
引用
收藏
页码:667 / 672
页数:6
相关论文
共 11 条
[1]  
ALBASSAM A, 1985, BRIT ASS CRYSTAL GRO
[2]   TEMPERATURE-GRADIENT SOLUTION ZONING GROWTH AND CHARACTERIZATION OF ZNXCD1-XSE SINGLE-CRYSTALS [J].
BURGER, A ;
ROTH, M .
JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :386-392
[3]  
FORGUE SV, 1951, RCA REV, V12, P335
[4]  
HARTMANN H, 1982, CURRENT TOPICS MATER, V9, P1
[5]  
KOLOMIETS BT, 1960, SOV PHYS-SOL STATE, V2, P154
[7]   Electron and hole traps in Zn0.25Cd0.75Se mixed crystals [J].
Lewis, JE ;
Ture, IE ;
Brinkman, AW ;
Woods, J .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (03) :213-217
[8]   VAPOR-PHASE GROWTH OF SINGLE CRYSTALS OF II-VI COMPOUNDS [J].
PIPER, WW ;
POLICH, SJ .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) :1278-&
[9]   PHOTOELECTRONIC PROPERTIES OF DEFECTS IN CDSE SINGLE CRYSTALS [J].
ROBINSON, AL ;
BUBE, RH .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5280-&
[10]   GROWTH OF CDS IN SEALED SILICA CAPSULES [J].
RUSSELL, GJ ;
WOODS, J .
JOURNAL OF CRYSTAL GROWTH, 1979, 46 (03) :323-330