ANALYSIS OF PHOTOTHERMAL IONIZATION SPECTRA OF SHALLOW IMPURITIES IN SILICON

被引：20

作者：

BAMBAKIDIS, G ^{[1
]}

BROWN, GJ ^{[1
]}

机构：

[1] USAF,WRIGHT AERONAUT LABS,MAT LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.33.8180

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8180 / 8187

页数：8

共 14 条

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[3]

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[4]

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SPRY, RJ ;

BROWN, GJ ;

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[6]

CHANDLER TC, UNPUB

[7] PHOTOTHERMAL IONIZATION SPECTROSCOPY OF ACCEPTORS IN HIGH-PURITY GERMANIUM [J].

DARKEN, LS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) :3754-3764

[8] PHOTOCONDUCTIVE RESPONSE OF COMPENSATING IMPURITIES IN PHOTOTHERMAL IONIZATION SPECTROSCOPY OF HIGH-PURITY SILICON AND GERMANIUM [J].

DARKEN, LS ;

HYDER, SA .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :731-733

[9]

FISCHER DW, 1983, PHYS REV B, V27, P4826, DOI 10.1103/PhysRevB.27.4826

[10] TEMPERATURE-DEPENDENCE OF THE PHOTOTHERMAL CONDUCTIVITY OF SEMICONDUCTORS AT LOW-TEMPERATURES [J].

JONGBLOETS, HWHM ;

STEEG, MJHVD ;

STOELINGA, JHM ;

WYDER, P .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (11) :2139-2145

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