PHOTOLUMINESCENCE PROCESS IN CD1-XMGXTE - P AND AL

被引：5

作者：

ISHIKANE, M

INOUE, M

YAGI, H

TANAKA, K

SHITAYA, T

ISHIDA, T

SATO, H

机构：

[1] MATSUSHITA ELECT IND CO,WIRELESS RES LAB,OSAKA 571,JAPAN

[2] FUKUI UNIV,DEPT APPL PHYS,FUKUI 910,JAPAN

[3] FUKUI UNIV,FAC EDUC,FUKUI 910,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 03期

关键词：

D O I：

10.1143/JJAP.15.433

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：433 / 438

页数：6

共 9 条

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ISHIKANE, M .

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[2] PREPARATION AND SOME PROPERTIES OF SOLID SOLUTIONS CD1-X MGXTE [J].

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[3] PHOTOLUMINESCENCE OF CDSE SINGLE-CRYSTALS [J].

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WADA, M .

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[4] AUGER RECOMBINATION OF EXCITONS BOUND TO NEUTRAL DONORS IN GALLIUM PHOSPHIDE AND SILICON [J].

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[5] EMISSION-SPECTRA OF CD1-XMGX TE LIGHT-EMITTING DIODES [J].

SHITAYA, T ;

SATO, H ;

ISHIDA, T .

APPLIED PHYSICS LETTERS, 1972, 21 (11) :523-&

[6]

TAGUCHI T, 1974, JAPAN J APPL PHYS, V12, P1558

[7] TEMPERATURE DEPENDENCES OF PAIR EMISSION BANDS IN GAP-GE [J].

TAJIMA, M ;

AOKI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (05) :819-826

[8] SHAPES OF PAIR EMISSION BANDS IN GAP-GE [J].

TAJIMA, M ;

AOKI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (05) :812-818

[9] VISIBLE ELECTROLUMINESCENCE FORM P-N JUNCTIONS IN CD1-X-MGX-TE [J].

YAMAMOTO, R ;

INOUE, M ;

ITOH, K ;

SHITAYA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (04) :537-&

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