DIRECT DETERMINATION OF IMPACT-IONIZATION RATES NEAR THRESHOLD IN SEMICONDUCTORS USING SOFT-X-RAY PHOTOEMISSION

被引:12
作者
EKLUND, EA
KIRCHNER, PD
SHUH, DK
MCFEELY, FR
CARTIER, E
机构
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
关键词
D O I
10.1103/PhysRevLett.68.831
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The line shape of the Al 2p core-level photoemission peak in Al0.9Ga0.1As is found to be strongly dependent on the electron kinetic energy. Using Monte Carlo transport simulations it is shown that the observed strong, asymmetric line broadening is caused by electron-phonon scattering. In agreement with the experimental observation, the simulations predict that this phonon-induced line broadening is rapidly suppressed as the core line is shifted through the impact-ionization threshold. Thus, it becomes possible to infer from the core-level line shape the energy-dependent impact-ionization rates near the impact-ionization threshold.
引用
收藏
页码:831 / 834
页数:4
相关论文
共 18 条
[1]  
ANTONCIK H, 1967, CZECH J PHYS B, V17, P735
[2]  
BUDE J, IN PRESS
[3]  
CAPASSO F, 1985, SEMICONDUCT SEMIMET, V22, P1
[4]   HOT-ELECTRON DYNAMICS IN SIO2 STUDIED BY SOFT-X-RAY-INDUCED CORE-LEVEL PHOTOEMISSION [J].
CARTIER, E ;
MCFEELY, FR .
PHYSICAL REVIEW B, 1991, 44 (19) :10689-10705
[5]   MONTE-CARLO SIMULATION OF TRANSPORT IN TECHNOLOGICALLY SIGNIFICANT SEMICONDUCTORS OF THE DIAMOND AND ZINCBLENDE STRUCTURES .1. HOMOGENEOUS TRANSPORT [J].
FISCHETTI, MV .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (03) :634-649
[6]  
GUTKIN AA, 1980, SOV PHYS SEMICOND+, V14, P688
[7]   ELECTRON SCATTERING BY PAIR PRODUCTION IN SILICON [J].
KANE, EO .
PHYSICAL REVIEW, 1967, 159 (03) :624-&
[8]  
KELDYSH LV, 1960, ZH EKSP TEOR FIZ, V10, P509
[9]  
KUMEKOV SE, 1973, SOV PHYS SEMICOND+, V7, P734
[10]   SOFT-X-RAY INDUCED CORE-LEVEL PHOTOEMISSION AS A PROBE OF HOT-ELECTRON DYNAMICS IN SIO2 [J].
MCFEELY, FR ;
CARTIER, E ;
TERMINELLO, LJ ;
SANTONI, A ;
FISCHETTI, MV .
PHYSICAL REVIEW LETTERS, 1990, 65 (15) :1937-1940