PREPARATION AND THERMOELECTRIC PROPERTIES OF BETA-FE1-XRUXSI2

被引:8
作者
TAKIZAWA, H
MO, PF
ENDO, T
SHIMADA, M
机构
[1] Department of Molecular Chemistry and Engineering, Faculty of Engineering, Tohoku University, Miyagi, 980, Sendai
关键词
D O I
10.1007/BF00360731
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
beta-Fe1-xRuxSi2 solid solution was synthesized by solid state reaction at 1100 degrees C for 48 h and subsequent annealing at 850 degrees C for 168 h in an evacuated silica tube. Single phase solid solution was obtained in the composition range 0 less than or equal to x less than or equal to 0.1. The thermal stability range of the beta-phase is extended to higher temperature region by partial substitution of Ru atom. The thermoelectric properties of Cr or Co-doped beta-Fe1-xRuxSi2 strongly depend on the sintering conditions. The samples with optimum thermoelectric properties are obtained by high-pressure sinistering at 3 GPa and 800 degrees C for 1 h. The optimum compositions are found to be Fe0.92Ru0.05Cr0.03Si2 and Fe0.92Ru0.05Co0.03Si2 for p-type and n-type materials, respectively. The power factors (sigma alpha(2)) of these materials are higher than that of beta-FeSi2 based materials.
引用
收藏
页码:4199 / 4203
页数:5
相关论文
共 12 条
[2]  
CORRE CL, 1972, PHYS STATUS SOLIDI B, V51, pK85
[3]  
Dusausoy P Y., 1971, ACTA CRYSTALLOGR B, V27, P1209, DOI [10.1107/S0567740871003765, DOI 10.1107/S0567740871003765]
[4]  
ECKERLIN P, 1971, LANDOLTBORNSTEIN NUM, V6, P866
[5]   HIGH-PRESSURE SYNTHESIS OF NEW COMPOUNDS, ZNSIN2 AND ZNGEN2 WITH DISTORTED WURTZITE STRUCTURE [J].
ENDO, T ;
SATO, Y ;
TAKIZAWA, H ;
SHIMADA, M .
JOURNAL OF MATERIALS SCIENCE LETTERS, 1992, 11 (07) :424-426
[6]  
ENGSTROM I, 1970, ACTA CHEM SCAND, V27, P2117
[7]   SEMICONDUCTING AND THERMOELECTRIC PROPERTIES OF SINTERED IRON DISILICIDE [J].
KOJIMA, T .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 111 (01) :233-242
[8]   OSMIUM DISILICIDE - PREPARATION, CRYSTAL-GROWTH, AND PHYSICAL-PROPERTIES OF A NEW SEMICONDUCTING COMPOUND [J].
MASON, K ;
MULLERVOGT, G .
JOURNAL OF CRYSTAL GROWTH, 1983, 63 (01) :34-38
[9]   STUDY OF SEMICONDUCTOR-TO-METAL TRANSITION IN MN-DOPED FESI2 [J].
NISHIDA, I .
PHYSICAL REVIEW B, 1973, 7 (06) :2710-2713
[10]  
NISHIDA I, 1985, KOGYO ZAIRYO, V33, P108