LIMITATIONS IN LOW-TEMPERATURE SILICON EPITAXY DUE TO WATER-VAPOR AND OXYGEN IN THE GROWTH AMBIENT

被引：34

作者：

FRIEDRICH, JA ^{[1
]}

NEUDECK, GW ^{[1
]}

LIU, ST ^{[1
]}

机构：

[1] HONEYWELL INC,PLYMOUTH,MN 55441

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 25期

关键词：

D O I：

10.1063/1.100530

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2543 / 2545

页数：3

共 9 条

[1]

BORLAND JO, 1985, SOLID STATE TECHNOL, V28, P141

[2] SILICON EPITAXY AT 650-800-DEGREES-C USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION BOTH WITH AND WITHOUT PLASMA ENHANCEMENT [J].

DONAHUE, TJ ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2757-2765

[3]

DROWLEY CI, 1987, ELECTROCHEM SOC PV, V877, P243

[4] INTERACTION OF H2O WITH SI(111) AND (100) - CRITICAL CONDITIONS FOR THE GROWTH OF SIO2 [J].

GHIDINI, G ;

SMITH, FW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) :2924-2928

[5] LOW-TEMPERATURE SILICON EPITAXY BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION [J].

MEYERSON, BS .

APPLIED PHYSICS LETTERS, 1986, 48 (12) :797-799

[6] LOW-TEMPERATURE SILICON EPITAXY BY HOT WALL ULTRAHIGH-VACUUM LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION TECHNIQUES - SURFACE OPTIMIZATION [J].

MEYERSON, BS ;

GANIN, E ;

SMITH, DA ;

NGUYEN, TN .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) :1232-1235

[7] EFFECT OF TRACE AMOUNTS OF OXYGEN ON THE HCL ETCHING OF SILICON [J].

RIJKS, HJ ;

BLOEM, J ;

GILING, LJ .

JOURNAL OF CRYSTAL GROWTH, 1979, 47 (03) :397-404

[8] REACTION OF OXYGEN WITH SI(111) AND (100) - CRITICAL CONDITIONS FOR THE GROWTH OF SIO2 [J].

SMITH, FW ;

GHIDINI, G .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) :1300-1306

[9]

VESCAN L, 1986, MATER RES SOC S P, V71, P133

← 1 →