INGAAS/INP P-I-N PHOTODIODES GROWN BY CHEMICAL BEAM EPITAXY

被引：17

作者：

TSANG, WT ^{[1
]}

CAMPBELL, JC ^{[1
]}

机构：

[1] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 21期

关键词：

D O I：

10.1063/1.96925

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1416 / 1418

页数：3

共 16 条

[1]

BRAIN M, UNPUB

[2] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J].

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1981, 38 (09) :701-703

[3]

COX HR, UNPUB

[4]

DUPUIS R, UNPUB

[5] LOW DARK-CURRENT, HIGH-EFFICIENCY PLANAR IN0.53 GA0.47 AS-INP P-I-N PHOTO-DIODES [J].

FORREST, SR ;

CAMLIBEL, I ;

KIM, OK ;

STOCKER, HJ ;

ZUBER, JR .

ELECTRON DEVICE LETTERS, 1981, 2 (11) :283-285

[6] VERY-HIGH-SPEED BACK-ILLUMINATED INGAAS-INP PIN PUNCH-THROUGH PHOTO-DIODES [J].

LEE, TP ;

BURRUS, CA ;

OGAWA, K ;

DENTAI, AG .

ELECTRONICS LETTERS, 1981, 17 (12) :431-432

[7] INGAAS-INP P-I-N PHOTO-DIODES FOR LIGHTWAVE COMMUNICATIONS AT THE 0.95-1.65 MU-M WAVELENGTH [J].

LEE, TP ;

BURRUS, CA ;

DENTAI, AG .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :232-238

[8] CHARACTERIZATION OF IN0.53GA0.47AS PHOTO-DIODES EXHIBITING LOW DARK CURRENT AND LOW JUNCTION CAPACITANCE [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BEEBE, ED ;

DEWINTER, JC .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :227-231

[9] NEW GAAS, GAP, AND GAASX P1-X VACUUM DEPOSITION TECHNIQUE USING ARSINE AND PHOSPHINE GAS [J].

MORRIS, FJ ;

FUKUI, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (02) :506-510

[10] GAINAS PIN PHOTODIODES GROWN BY ATMOSPHERIC-PRESSURE MOVPE [J].

NELSON, AW ;

WONG, S ;

RITCHIE, S ;

SARGOOD, SK .

ELECTRONICS LETTERS, 1985, 21 (19) :838-840

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