A TENTATIVE ASSESSMENT OF SEMICONDUCTOR-LASER OPTICAL BISTABILITY

被引:17
作者
ADAMS, MJ
机构
[1] British Telecom Research Laboratories, Martlesham Heath, Ipswich IP5 7RE, United Kingdom
关键词
D O I
10.1080/00207218608920767
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
86
引用
收藏
页码:123 / 142
页数:20
相关论文
共 86 条
[1]  
ABRAHAM NB, 1983, LASER FOCUS WORLD, V19, P73
[2]  
ADAMS MJ, 1985, UNPUB P I ELECT EN J
[3]  
ADAMS MJ, 1985, UNPUB IEEE J QUANT E
[4]   POLARIZATION CHARACTERISTICS OF DISTRIBUTED FEEDBACK SEMICONDUCTOR-LASERS [J].
AGRAWAL, GP ;
DUTTA, NK .
APPLIED PHYSICS LETTERS, 1985, 46 (03) :213-215
[5]   OPTICAL BISTABILITY IN COUPLED-CAVITY SEMICONDUCTOR-LASERS [J].
AGRAWAL, GP ;
DUTTA, NK .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (03) :664-669
[6]   DYNAMICS OF INJECTION LASERS [J].
BASOV, NG .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (11) :855-+
[7]   BISTABLE OPERATION AND SPECTRAL TUNING OF INJECTION-LASER WITH EXTERNAL DISPERSIVE CAVITY [J].
BAZHENOV, VY ;
BOGATOV, AP ;
ELISEEV, PG ;
OKHOTNIKOV, OG ;
PAK, GT ;
RAKHVALSKY, MP ;
SOSKIN, MS ;
TARANENKO, VB ;
KHAIRETDINOV, KA .
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1982, 129 (02) :77-82
[8]   DOUBLE-HETEROJUNCTION LASER-DIODES WITH MULTIPLY SEGMENTED CONTACTS [J].
CARNEY, JK ;
FONSTAD, CG .
APPLIED PHYSICS LETTERS, 1981, 38 (05) :303-305
[9]   GAINASP-INP SURFACE EMITTING LASER (LAMBDA = 1.4 MU-M, 77-K) WITH HETEROMULTILAYER BRAGG REFLECTOR [J].
CHAILERTVANITKUL, A ;
IGA, K ;
MORIKI, K .
ELECTRONICS LETTERS, 1985, 21 (07) :303-304
[10]   DIRECT POLARIZATION SWITCHING IN SEMICONDUCTOR-LASERS [J].
CHEN, YC ;
LIU, JM .
APPLIED PHYSICS LETTERS, 1984, 45 (06) :604-606