IN-SITU X-RAY-DIFFRACTION STUDY OF COSI2 FORMATION DURING ANNEALING OF A CO/TI BILAYER ON SI(100)

X-ray diffraction was performed in situ during annealing of a Co/Ti/Si(001) multilayer, which produced an epitaxial CoSi2 layer. The results indicate that the Ti layer did not stay intact during the reaction, and thus could not act like a membrane, moderating Co/Si interdiffusion. Strongly textured phases (M) formed prior to CoSi2 nucleation, and was unobservable upon completion of the anneal. Nucleation and growth of CoSi 2 on Si(001) took place in the presence of M, new Co-Ti-(O) phases that were located at the metal/Si interface, and thus M might play an important role in the perfection of the silicide. © 1995 American Institute of Physics.