EVOLUTION OF THE ELECTRON ACOUSTIC-SIGNAL AS FUNCTION OF DOPING LEVEL IN III-V SEMICONDUCTORS

被引：16

作者：

BRESSE, JF

PAPADOPOULO, AC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 01期

关键词：

D O I：

10.1063/1.341225

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：98 / 102

页数：5

共 23 条

[1]

BALK LJ, 1984, I PHYS C SER, V76, P342

[2] THERMAL-WAVE MICROSCOPY WITH ELECTRON-BEAMS [J].

BRANDIS, E ;

ROSENCWAIG, A .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :98-100

[3] BE INCORPORATION IN HEAVILY DOPED MOLECULAR-BEAM EPITAXY GROWN GAAS - EVIDENCE OF NONRADIATIVE BEHAVIOR BY CATHODOLUMINESCENCE AND ELECTRON ACOUSTIC MEASUREMENTS [J].

BRESSE, JF ;

PAPADOPOULO, AC .

APPLIED PHYSICS LETTERS, 1987, 51 (03) :183-185

[4] ULTRASONIC-IMAGING IN SCANNING ELECTRON-MICROSCOPY [J].

CARGILL, GS .

NATURE, 1980, 286 (5774) :691-693

[5]

CARLAW HS, 1973, CONDUCTION HEAT SOLI, P64

[6] THERMAL CONDUCTIVITY OF GAAS AND GAAS1-XPX LASER SEMICONDUCTORS [J].

CARLSON, RO ;

SLACK, GA ;

SILVERMAN, SJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (02) :505-+

[7]

DAVIES DG, 1983, SCANNING ELECTRON MI, V3, P1163

[8] HEAVY DOPING OF GAAS AND ALGAAS WITH SILICON BY MOLECULAR-BEAM EPITAXY [J].

HEIBLUM, M ;

WANG, WI ;

OSTERLING, LE ;

DELINE, V .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6751-6753

[9]

HOLLAND MG, 1965, SEMICONDUCTORS SEMIM, V2, P3

[10] PENETRATION AND ENERGY-LOSS THEORY OF ELECTRONS IN SOLID TARGETS [J].

KANAYA, K ;

OKAYAMA, S .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (01) :43-&

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