LUMINESCENCE LINE-SHAPE BROADENING MECHANISMS IN GALNAS/ALLNAS QUANTUM WELLS

被引：81

作者：

WELCH, DF ^{[1
]}

WICKS, GW ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 10期

关键词：

D O I：

10.1063/1.95791

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：991 / 993

页数：3

共 8 条

[1]

GRIEM T, 1984, UNPUB I PHYS C SER

[2] MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR-BEAM EPITAXIAL GROWN IN0.52AL0.48AS/IN0.53GA0.47AS, N-N HETEROJUNCTION BY C-V PROFILING [J].

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[3] ALLOY BROADENING IN PHOTOLUMINESCENCE SPECTRA OF ALXGA1-XAS [J].

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PHYSICAL REVIEW B, 1984, 30 (02) :813-820

[4] 1.5-1.6-MU-M GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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CHO, AY .

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[5]

THOMPSON GHB, 1980, PHYSICS SEMICONDUCTO, P54

[6] CALCULATION OF THE CONDUCTION-BAND DISCONTINUITY FOR GA0.47IN0.53AS-AL0.48IN0.52AS HETEROJUNCTION [J].

WELCH, DF ;

WICKS, GW ;

EASTMAN, LF .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :3176-3179

[7] GAINAS-ALINAS HETEROSTRUCTURES FOR OPTICAL-DEVICES GROWN BY MBE [J].

WELCH, DF ;

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WOODARD, DW ;

EASTMAN, LF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :202-204

[8] OPTICAL-PROPERTIES OF GAINAS/ALLNAS SINGLE QUANTUM WELLS [J].

WELCH, DF ;

WICKS, GW ;

EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1983, 43 (08) :762-764

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