METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER

被引：1927

作者：

AMANO, H ^{[1
]}

SAWAKI, N ^{[1
]}

AKASAKI, I ^{[1
]}

TOYODA, Y ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD,KAWASAKI LAB,TAMA KU,KAWASAKI,KANAGAWA 214,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 05期

关键词：

D O I：

10.1063/1.96549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：353 / 355

页数：3

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