IMPROVEMENT OF THE ELECTRICAL-PROPERTIES OF METAL-FERROELECTRIC BAMGF4-SILICON CAPACITOR BY RAPID THERMAL ANNEALING

被引：6

作者：

KIM, KH ^{[1
]}

KIM, JD ^{[1
]}

ISHIWARA, H ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,PRECIS & INTELLIGENCE LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 23期

关键词：

D O I：

10.1063/1.113703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Use of a rapid thermal annealing technique is shown to improve the electrical properties of metal-ferroelectric BaMgF4-silicon capacitors. The fluoride film was deposited in an ultrahigh vacuum system at a substrate temperature of 300°C. A postdeposition annealing was conducted for 10 s at 600°C followed by subsequent annealing for 5 s at 750°C. The results were found out to increase the resistivity of the ferroelectric BaMgF4 film from a typical value of 1-2×1011Ω cm before the annealing to about 5×1013 Ω cm at 1 MV/cm and reduce the interface state density of the BaMgF4/Si interface to about 8×1010/cm2 eV. Ferroelectric hysteresis measurements using a Sawyer-Tower circuit yielded remanent polarization and coercive field values of about 0.26 μC/cm2 and 315 kV/cm, respectively.© 1995 American Institute of Physics.

引用

页码：3143 / 3145

页数：3

共 15 条

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