ANALYSIS OF YTTERBIUM ARSENIDE FILMS GROWN ON GAAS BY MOLECULAR-BEAM EPITAXY

被引:41
作者
RICHTER, HJ
SMITH, RS
HERRES, N
SEELMANNEGGEBERT, M
WENNEKERS, P
机构
关键词
D O I
10.1063/1.100361
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:99 / 101
页数:3
相关论文
共 9 条
  • [1] CAMPAGNA M, 1979, PHOTOEMISSION SOLIDS, V2, P217
  • [2] Dieke G.H., 1968, SPECTRA ENERGY LEVEL
  • [3] RARE-EARTH-METAL SEMICONDUCTOR INTERFACIAL REACTIONS - THERMODYNAMIC ASPECTS
    FUJIMORI, A
    GRIONI, M
    WEAVER, JH
    [J]. PHYSICAL REVIEW B, 1986, 33 (02): : 726 - 735
  • [4] Hufner S., 1978, OPTICAL SPECTRA TRAN
  • [5] SMITH RS, IN PRESS ELECTRON LE
  • [6] SMITH RS, 1987, Patent No. 37281364
  • [7] SMITH RS, 1987, Patent No. 37281356
  • [8] RARE-EARTH ARSENIDES - NONSTOICHIOMETRY IN ROCKSALT PHASES
    TAYLOR, JB
    CALVERT, LD
    DESPAULT, JG
    GABE, EJ
    MURRAY, JJ
    [J]. JOURNAL OF THE LESS-COMMON METALS, 1974, 37 (02): : 217 - 232
  • [9] RARE-EARTH-METAL SCHOTTKY-BARRIER CONTACTS TO GAAS
    WALDROP, JR
    [J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 864 - 866