ELECTRON-BOMBARDMENT EFFECT ON THE REVERSE IV CHARACTERISTICS AND TENSOSENSIBILITY OF P+-NGAAS DIODES

被引：5

作者：

BRUDNYI, VN

VILISOV, AA

GAMAN, VI

DIAMOND, VM

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(83)90028-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：699 / 703

页数：5

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