COMPUTED TRANSIENT SOLUTION FOR MSM DIODE WITH TRAPS

被引:3
作者
BOUDRY, MR
机构
[1] Department of Electrical Engineering, University of Melbourne, Parkville
关键词
D O I
10.1049/el:19680149
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A numerical technique has been developed to simulate a 1-carrier model of the m.s.m. diode with traps. The distributions of free and trapped carriers, and consequently the terminal! current, are predicted as functions of time following a step change in the voltage across the device. © 1968, The Institution of Electrical Engineers. All rights reserved.
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页码:193 / &
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