SUBSTRATE ORIENTATION DEPENDENCE OF GROWTH-RATE OF INGAAS/INP GROWN BY LIQUID-PHASE EPITAXY

[1] LIQUID-PHASE EPITAXY OF INXGA1-XAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1393 - &

[2] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2257 - &

[3] PRAZISIONSBESTIMMUNG DER GITTERKONSTANTEN VON AIIIBV-VERBINDUNGEN [J]. ACTA CRYSTALLOGRAPHICA, 1958, 11 (05): : 369 - 371

[4] COMPUTER-SIMULATION OF CRYSTAL-GROWTH [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 3 - 10

[5] HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7

[6] PRESENT STATE OF THEORY OF CRYSTAL-GROWTH FROM MELT [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) : 130 - 136

[7] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J]. ELECTRONICS LETTERS, 1980, 16 (10) : 353 - 355

[8] LICHTER BD, 1969, T METALL SOC AIME, V245, P1021

[9] PHASE-DIAGRAM OF IN-GA-AS-P-QUATERNARY SYSTEM AND LPE GROWTH-CONDITIONS FOR LATTICE MATCHING ON INP SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (01) : 123 - 127

[10] NAKAJIMA K, 1979, J APPL PHYS, V50, P4975, DOI 10.1063/1.325575

[1] LIQUID-PHASE EPITAXY OF INXGA1-XAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1393 - &

[2] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2257 - &

[3] PRAZISIONSBESTIMMUNG DER GITTERKONSTANTEN VON AIIIBV-VERBINDUNGEN [J]. ACTA CRYSTALLOGRAPHICA, 1958, 11 (05): : 369 - 371

[4] COMPUTER-SIMULATION OF CRYSTAL-GROWTH [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 3 - 10

[5] HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7

[6] PRESENT STATE OF THEORY OF CRYSTAL-GROWTH FROM MELT [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) : 130 - 136

[7] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J]. ELECTRONICS LETTERS, 1980, 16 (10) : 353 - 355

[8] LICHTER BD, 1969, T METALL SOC AIME, V245, P1021

[9] PHASE-DIAGRAM OF IN-GA-AS-P-QUATERNARY SYSTEM AND LPE GROWTH-CONDITIONS FOR LATTICE MATCHING ON INP SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (01) : 123 - 127

[10] NAKAJIMA K, 1979, J APPL PHYS, V50, P4975, DOI 10.1063/1.325575