THE GROWTH OF QUANTUM WELL GAAS/GAALAS LASER STRUCTURES

被引：7

作者：

HERSEE, SD

BALDY, M

ASSENAT, P

机构：

来源：

JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC-5期

关键词：

D O I：

10.1051/jphyscol:1982523

中图分类号：

学科分类号：

摘要：

引用

页码：193 / 199

页数：7

共 9 条

[1]

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[2] PREPARATION AND PROPERTIES OF GA1-XALXAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (03) :128-135

[3] LOW-THRESHOLD GRIN-SCH GAAS/GAALAS LASER STRUCTURE GROWN BY OM VPE [J].

HERSEE, S ;

BALDY, M ;

ASSENAT, P ;

DECREMOUX, B ;

DUCHEMIN, JP .

ELECTRONICS LETTERS, 1982, 18 (14) :618-620

[4] THE GROWTH OF QUANTUM WELL GAAS/GAALAS LASER STRUCTURES [J].

HERSEE, SD ;

BALDY, M ;

ASSENAT, P .

JOURNAL DE PHYSIQUE, 1982, 43 (NC-5) :193-199

[5]

HERSEE SD, 1982, UNPUB ELECTRONICS LE

[6] QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

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KOLBAS, RM ;

DUPUIS, RD ;

DAPKUS, PD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186

[7]

HUBER AM, 1982, 12TH INT C DEF SEM A

[8] EXTREMELY LOW THRESHOLD (ALGA)AS GRADED-INDEX WAVEGUIDE SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :217-219

[9] A GRADED-INDEX WAVE-GUIDE SEPARATE-CONFINEMENT LASER WITH VERY LOW THRESHOLD AND A NARROW GAUSSIAN-BEAM [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1981, 39 (02) :134-137

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