DECAY OF 3D ELEMENT INTERNAL PHOTOLUMINESCENCE TRANSITIONS IN III-V-SEMICONDUCTORS

被引：14

作者：

GUILLOT, G

BENJEDDOU, C

LEYRAL, P

NOUAILHAT, A

机构：

来源：

关键词：

D O I：

10.1016/0022-2313(84)90320-X

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：439 / 441

页数：3

共 4 条

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PICOLI, G
LAMBERT, B
MARTINEZ, G
[J]. PHYSICAL REVIEW B, 1984, 29 (10): : 5749 - 5763
[3] TIME-DEPENDENT PHOTOLUMINESCENCE OF INP-FE
KLEIN, PB
FURNEAUX, JE
HENRY, RL
[J]. PHYSICAL REVIEW B, 1984, 29 (04): : 1947 - 1961
[4] THE DECAY OF INFRARED LUMINESCENCE IN II-VI COMPOUND SEMICONDUCTORS DOPED BY 3D TRANSITION-ELEMENTS
RENZ, R
SCHULZ, HJ
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (24): : 4917 - 4932