EXCITONIC ABSORPTION-SPECTRA OF GAAS-ALAS SUPERLATTICE AT HIGH-TEMPERATURE

被引:52
作者
IWAMURA, H
KOBAYASHI, H
OKAMOTO, H
机构
[1] NTT, Musashino Electrical, Communication Lab, Musashino, Jpn, NTT, Musashino Electrical Communication Lab, Musashino, Jpn
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 10期
关键词
SEMICONDUCTING ALUMINUM COMPOUNDS - SPECTROSCOPY; ABSORPTION;
D O I
10.1143/JJAP.23.L795
中图分类号
O59 [应用物理学];
学科分类号
摘要
Optical absorption spectra of MBE grown GaAs-AlAs superlattices with various thickness of the potential-well layer were measured in the temperature range up to 500 K. The excitonic absorption peak is observed even at a temperature of 500 K or higher. The broadening parameter GAMMA for the exciton peak was determined by a curve fitting. This parameter determines the temperature limit below which double absorption peaks due to heavy and light hole exciton are observed.
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页码:L795 / L798
页数:4
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