DYNAMICS OF DEEP LEVEL TRAPPING IN SPACE-CHARGE REGIONS

被引：13

作者：

JONSCHER, AK

机构：

[1] Department of Physics Royal Holloway, Bedford New College Egham

来源：

SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 01期

关键词：

D O I：

10.1016/0038-1101(90)90019-B

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：139 / 142

页数：4

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