HETEROSTRUCTURE ACOUSTIC CHARGE TRANSPORT DEVICES ON MOLECULAR-BEAM EPITAXY GROWN GAAS/(AL,GA)AS EPITAXIAL LAYERS

被引：4

作者：

TANSKI, WJ

SACKS, RN

MERRITT, SW

CULLEN, DE

BRANCIFORTE, EJ

ESCHRICH, TC

CARROLL, RD

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.585069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：352 / 354

页数：3

共 4 条

[1] CHARGE TRANSPORT BY SURFACE ACOUSTIC-WAVES IN GAAS [J].

HOSKINS, MJ ;

MORKOC, H ;

HUNSINGER, BJ .

APPLIED PHYSICS LETTERS, 1982, 41 (04) :332-334

[2]

HOSKINS MJ, 1982, P ULTRASONICS S, V456

[3] ACOUSTIC CHARGE TRANSPORT IN AN (AL,GA)AS/GAAS HETEROJUNCTION STRUCTURE GROWN BY MOLECULAR-BEAM EPITAXY [J].

SACKS, RN ;

TANSKI, WJ ;

MERRITT, SW ;

CULLEN, DE ;

BRANCIFORTE, EJ ;

ESCHRICH, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :685-687

[4] HETEROJUNCTION ACOUSTIC CHARGE TRANSPORT DEVICES ON GAAS [J].

TANSKI, WJ ;

MERRITT, SW ;

SACKS, RN ;

CULLEN, DE ;

BRANCIFORTE, EJ ;

CARROLL, RD ;

ESCHRICH, TC .

APPLIED PHYSICS LETTERS, 1988, 52 (01) :18-20

← 1 →