THE GROWTH AND CHARACTERIZATION OF HGTE EPITAXIAL LAYERS MADE BY ORGANOMETALLIC EPITAXY

被引：17

作者：

BHAT, I

GHANDHI, SK

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 08期

关键词：

D O I：

10.1149/1.2115992

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1923 / 1926

页数：4

相关论文

共 10 条

[1] PARTIAL PRESSURES OF HG(G) AND TE2(G) IN HG-TE SYSTEM FROM OPTICAL DENSITIES
BREBRICK, RF
STRAUSS, AJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (06) : 989 - &
[2] DIFFUSION IN CDHG1-XTE AND RELATED MATERIALS
BROWN, M
WILLOUGHBY, AFW
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 27 - 39
[3] PRESSURE-TEMPERATURE PHASE-DIAGRAMS OF HGTE AND HG1-XCDXTE SYSTEMS
FARRAR, RA
GILLHAM, CJ
BARTLETT, B
QUELCH, M
[J]. JOURNAL OF MATERIALS SCIENCE, 1977, 12 (04) : 836 - 838
[4] TEMPERATURE DEPENDENCE OF INTRINSIC CONCENTRATION IN HGTE
GALAZKA, RR
[J]. PHYSICS LETTERS A, 1970, A 32 (02) : 101 - &
[5] HARMAN TC, 1967, PHYSICS CHEM 2 6 COM
[6] THE DEPENDENCE OF THE HALL COEFFICIENT OF A MIXED SEMICONDUCTOR UPON MAGNETIC INDUCTION AS EXEMPLIFIED BY INDIUM ANTIMONIDE
HOWARTH, DJ
JONES, RH
PUTLEY, EH
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1957, 70 (01): : 124 - 135
[7] EPITAXIAL-GROWTH OF HGTE BY A MOVPE PROCESS
IRVINE, SJC
MULLIN, JB
ROYLE, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (01) : 15 - 20
[8] LOW-TEMPERATURE CVD GROWTH OF EPITAXIAL HGTE ON CDTE
KUECH, TF
MCCALDIN, JO
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1142 - 1144
[9] SHAW DW, 1974, CRYSTAL GROWTH THEOR, V1
[10] VAPOR-PHASE GROWTH OF HG1-XCDXTE EPITAXIAL LAYERS
VOHL, P
WOLFE, CM
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (05) : 659 - 678