A PHYSICAL MODEL FOR RANDOM TELEGRAPH SIGNAL CURRENTS IN SEMICONDUCTOR-DEVICES

被引：90

作者：

KANDIAH, K

DEIGHTON, MO

WHITING, FB

机构：

[1] AERE,HARWELL OX11 0RA,OXON,ENGLAND

[2] LINK ANALYT LTD,HIGH WYCOMBE HP12 3SE,BUCKS,ENGLAND

来源：

关键词：

D O I：

10.1063/1.343523

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：937 / 948

页数：12

共 27 条

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