DETECTION OF DRY-ETCHED INDUCED DAMAGE BY NONCONTACT PHOTOTHERMAL RADIOMETRY, PHOTOLUMINESCENCE AND DEEP LEVEL TRANSIENT SPECTROSCOPY

被引：2

作者：

HERBERT, PAF

CREAN, GM

LITTLE, I

KELLY, WM

HUGHES, G

HENRY, M

机构：

[1] National Microelectronics Research Centre, Prospect Row, Cork

[2] Dublin City University, Dublin

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 13卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90128-Z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：437 / 441

页数：5

共 4 条

[1]

Pang, Et al., Dry etching induced damage on vertical sidewalls of GaAs channels, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 6 B, 6, (1988)

[2]

Crean, Et al., Proc. 6th International Symp. on Si Materials Science and Technology, The Electrochem. Soc., Proc., 90-97, (1990)

[3]

Weimen, Et al., Reactive-ion- and plasma-etching-induced extended defects in silicon studied with photoluminescence, Journal of Applied Physics, 67, (1990)

[4]

Singh, Et al., Proc. 15th Int. Conf. Defects in Semicond., (1988)

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