A HIGH-EFFICIENCY V-BAND MONOLITHIC HEMT POWER-AMPLIFIER

被引：6

作者：

KASODY, RE

DOW, GS

SHARMA, AK

AUST, MV

YAMAUCHI, D

LAI, R

BIEDENBENDER, M

TAN, KL

ALLEN, BR

机构：

[1] Redondo Beach, CA, 90278, TRW

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1994年 / 4卷 / 09期

关键词：

D O I：

10.1109/75.311515

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the performance of a monolithic V-band power amplifier using 0.15-mum double heterostructure pseudomorphic InGaAs/AlGaAs/GaAs HEMT's. The amplifier using a 400-mum device driving a 2 x 400-mum device. It has demonstrated output power of 313 mW (0.39 W/mm) with 8.95 dB power gain and 19.9% PAE at 59.5 GHz. These data represent the highest reported combination of output power, power gain, and power-added efficiency reported for a V-band monolithic power amplifier.

引用

页码：303 / 304

页数：2