A SOLUTION GROWTH TECHNIQUE FOR THE DEPOSITION OF COBALT SELENIDE THIN-FILM

被引：18

作者：

PRAMANIK, P

BHATTACHARYA, S

BASU, PK

机构：

[1] Indian Inst of Technology, Kharagpur, India, Indian Inst of Technology, Kharagpur, India

来源：

THIN SOLID FILMS | 1987年 / 149卷 / 03期

关键词：

COBALT COMPOUNDS - Thin Films - SOLUTIONS - X-RAY ANALYSIS;

D O I：

10.1016/0040-6090(87)90401-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This letter describes successful deposition of a CoSe thin film by the solution growth technique. The CoSe film thicknesses were in the range of 120-460 nm, as measured using the Fizeau interferometric method. X-ray analysis revealed that the as-deposited samples were amorphous.

引用

页码：L81 / L84

页数：4

共 5 条

[1]

BHATTACHARYA RN, 1982, J SOLID STATE CHEM, V43

[2] DEPOSITION OF CADMIUM CHALCOGENIDE THIN-FILMS BY A SOLUTION GROWTH TECHNIQUE USING TRIETHANOLAMINE AS A COMPLEXING AGENT [J].