ELECTROCHEMICAL CODEPOSITION OF GALLIUM AND ARSENIC FROM A ROOM-TEMPERATURE CHLOROGALLATE MELT

被引：44

作者：

CARPENTER, MK

VERBRUGGE, MW

机构：

[1] General Motors Research Laboratories, Physical Chemistry Department, Warren, Michigan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 01期

关键词：

D O I：

10.1149/1.2086346

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

An electrodeposition process by which gallium arsenide can be formed at room temperatures is reported. Gallium and arsenic can be codeposited from a room temperature melt comprised of GaCl3 and ImCl (1-methyl-3-ethylimidazolium chloride) and anasc13 solute. Codeposition is studied over a potential range of 0 to -2V relative to an aluminum reference. The formation of the compound GaAs was confrimed by x-ray photoelectron spectroscopy. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：123 / 129

页数：7

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[1] DIFFUSION-CONTROLLED MULTISWEEP CYCLIC VOLTAMMETRY .3. DEPOSITION OF SILVER ON STATIONARY AND ROTATING-DISK ELECTRODES [J].