GROWTH OF INGAAS/INP QUANTUM-WELL STRUCTURES BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：3

作者：

MCCRARY, VR

LEE, JW

CHU, SNG

SLUSKY, SEG

BRELVI, MA

LIVESCU, G

THOMAS, PM

KETELSEN, LJP

ZILKO, JL

机构：

[1] AT and T Bell Laboratories, 600 Mountain Avenue, Murray Hill

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 18卷 / 1-2期

关键词：

MOVCD; METALORGANIC CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; QUANTUM WELLS;

D O I：

10.1016/0167-9317(92)90123-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully grown InGaAsP/InP single quantum well (SQW) and multi quantum well (MQW) structures by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The LP-MOCVD reactor is a commercial unit built by AIXTRON GmbH, the first of its kind in the United States. The quantum wells grown in this reactor consist of 1.3 and 1.5-mu-m composition InGaAsP, with barriers of InP. Layer thicknesses vary from 18 angstrom to 1300 angstrom for the various structures grown. Analysis of these structures by low-temperature photoluminescence reveals distinct, sharp luminescent peaks, with half-widths from 4.8 meV to 13 meV. Cross-sectional transmission electron microscopy and Auger spectroscopy of the quantum well structures reveal extremely sharp interfaces and homogeneous composition, demonstrating the feasibility of LP-MOCVD for the growth of very thin epitaxial layers. These preliminary data indicate that the growth of MQW structures for the next generation of laser diodes (i.e. MQW-DFB lasers), with monolayer interfacial abruptness, is possible by LP-MOCVD.

引用

页码：75 / 88

页数：14

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