ION-BEAM EFFECTS ON GLASS SURFACES

被引：25

作者：

SMETS, BMJ

LOMMEN, TPA

机构：

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1982年 / 65卷 / 06期

关键词：

D O I：

10.1111/j.1151-2916.1982.tb10453.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：C80 / C80

页数：1

共 18 条

[1]

Czanderna A.W., 1975, METHODS SURFACE ANAL, V1

[2] SECONDARY-ELECTRON EMISSION OF SEMICONDUCTING GLASSES [J].

DUNN, B ;

OOKA, K ;

MACKENZIE, JD .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1973, 56 (09) :494-494

[3] SECONDARY-ION MASS-SPECTROMETRY (SIMS) ANALYSIS OF ELECTRON-BOMBARDED SODA-LIME-SILICA GLASS [J].

GOSSINK, RG ;

LOMMEN, TPA .

APPLIED PHYSICS LETTERS, 1979, 34 (07) :444-446

[4] SIMS ANALYSIS OF AQUEOUS CORROSION PROFILES IN SODA-LIME-SILICA GLASS [J].

GOSSINK, RG ;

GREFTE, HAMD ;

WERNER, HW .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1979, 62 (1-2) :4-9

[5] LIMITATIONS OF ION ETCHING FOR INTERFACE ANALYSIS [J].

HOLLOWAY, PH ;

BHATTACHARYA, RS .

SURFACE AND INTERFACE ANALYSIS, 1981, 3 (03) :118-125

[6] PHASE-CHANGES IN INSULATORS PRODUCED BY PARTICLE BOMBARDMENT [J].

KELLY, R .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :351-378

[7] ON THE PROBLEM OF WHETHER MASS OR CHEMICAL BONDING IS MORE IMPORTANT TO BOMBARDMENT-INDUCED COMPOSITIONAL CHANGES IN ALLOYS AND OXIDES [J].

KELLY, R .

SURFACE SCIENCE, 1980, 100 (01) :85-107

[8] X-RAY PHOTOELECTRON SPECTROSCOPIC STUDIES OF PBO SURFACES BOMBARDED WITH HE+, NE+, AR+, XE+ AND KR+ [J].

KIM, KS ;

BAITINGER, WE ;

WINOGRAD, N .

SURFACE SCIENCE, 1976, 55 (01) :285-290

[9] OXYGEN OUTGASSING CAUSED BY ELECTRON BOMBARDMENT OF GLASS [J].

LINEWEAVER, JL .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1786-&

[10] ION NEUTRALIZATION PROCESSES AT INSULATOR SURFACES AND CONSEQUENT IMPURITY MIGRATION EFFECTS IN SIO2 FILMS [J].

MCCAUGHAN, DV ;

KUSHNER, RA ;

MURPHY, VT .

PHYSICAL REVIEW LETTERS, 1973, 30 (13) :614-617

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