ELECTRONIC TRANSPORT IN AMORPHOUS-GERMANIUM ARSENIDES

被引：2

作者：

PARK, CJ ^{[1
]}

MAHAN, JE ^{[1
]}

SHIAH, RTS ^{[1
]}

VANDERPLAS, HA ^{[1
]}

BUBE, RH ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 12期

关键词：

D O I：

10.1063/1.321576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5307 / 5308

页数：2

共 7 条

[1] ANALYSIS OF PHOTOCONDUCTIVITY IN AMORPHOUS CHALCOGENIDES [J].

ARNOLDUS.TC ;

BUBE, RH ;

HOLMBERG, SA ;

FAGEN, EA .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1798-&

[2] LOCALIZED STATES AND CARRIER TRANSPORT IN AMORPHOUS-CHALCOGENIDE SEMICONDUCTORS [J].

ARNOLDUSSEN, TC ;

MENEZES, CA ;

NAKAGAWA, Y ;

BUBE, RH .

PHYSICAL REVIEW B, 1974, 9 (08) :3377-3393

[3]

ARNOLDUSSEN TC, 1972, J NONCRYST SOLIDS, V8, P933, DOI DOI 10.1016/0022-3093(72)90249-9

[4] TRANSPORT AND LOCALIZED LEVELS IN AMORPHOUS BINARY CHALCOGENIDES [J].

BUBE, RH ;

MAHAN, JE ;

SHIAH, RTS ;

VANDERPL.HA .

APPLIED PHYSICS LETTERS, 1974, 25 (07) :419-421

[5]

MAHAN JE, UNPUBLISHED

[6]

SHIAH RTS, TO BE PUBLISHED

[7]

VANDERPLAS HC, UNPUBLISHED

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