EFFECT OF DIRECT-INDIRECT TRANSITION ON HALL EFFECT IN GA(AS1-XPX)

被引：18

作者：

WOLFE, CM

HOLONYAK, N

NUESE, CJ

STILLMAN, GE

SIRKIS, MD

机构：

来源：

关键词：

D O I：

10.1063/1.1707856

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：434 / &

共 7 条

[1] HIGH-TEMPERATURE HALL COEFFICIENT IN GAS [J].

AUKERMAN, LW ;

WILLARDSON, RK .

[2] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].

EHRENREICH, H .

PHYSICAL REVIEW, 1960, 120 (06) :1951-1963

[3] BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS [J].

EHRENREICH, H .

[4]

HILL DA, TO BE PUBLISHED

[5] COHERENT (VISIBLE) LIGHT EMISSION FROM GA(AS1-XPX) JUNCTIONS [J].

HOLONYAK, N ;

BEVACQUA, SF .

[6] CONDUCTION BAND MINIMA OF GA(AS1MINUSXPX) [J].

SPITZER, WG ;

MEAD, CA .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A) :A872-&

[7] GROWTH AND DISLOCATION STRUCTURE OF SINGLE-CRYSTAL GA(AS1-XPX) [J].

WOLFE, CM ;

NUESE, CJ ;

HOLONYAK, N .