BAND MIXING IN NARROW GAP SEMICONDUCTORS

被引：23

作者：

BRENIG, W

KASAI, H

机构：

来源：

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1984年 / 54卷 / 03期

关键词：

D O I：

10.1007/BF01319182

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：191 / 194

页数：4

共 7 条

[1] [Anonymous], 1966, SEMICONDUCTORS SEMIM
[2] BAND STRUCTURE OF INDIUM ANTIMONIDE
KANE, EO
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 249 - 261
[3] THEORY OF SPACE-CHARGE LAYERS IN NARROW-GAP SEMICONDUCTORS
MARQUES, GE
SHAM, LJ
[J]. SURFACE SCIENCE, 1982, 113 (1-3) : 131 - 136
[4] SCHOLZ J, UNPUB SURF SCI
[5] SCHOLZ J, 1983, THESIS TU MUNCHEN
[6] TAKADA Y, 1982, LECTURE NOTES PHYSIC, V152
[7] THEORY OF OPTICAL-TRANSITIONS IN INVERSION-LAYERS OF NARROW-GAP SEMICONDUCTORS
ZAWADZKI, W
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (01): : 229 - 240