USING ELNES WITH PARALLEL EELS FOR DIFFERENTIATING BETWEEN A-SI-X THIN-FILMS

被引：18

作者：

AUCHTERLONIE, GJ ^{[1
]}

MCKENZIE, DR ^{[1
]}

COCKAYNE, DJH ^{[1
]}

机构：

[1] UNIV SYDNEY,SCH PHYS,SYDNEY,NSW 2006,AUSTRALIA

来源：

关键词：

D O I：

10.1016/0304-3991(89)90216-7

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：217 / 222

页数：6

共 9 条

[1] AYLWARD GH, 1974, SI CHEM DATA, P102
[2] L2,3 THRESHOLD SPECTRA OF DOPED SILICON AND SILICON-COMPOUNDS
BROWN, FC
BACHRACH, RZ
SKIBOWSKI, M
[J]. PHYSICAL REVIEW B, 1977, 15 (10): : 4781 - 4788
[3] COLLIEX C, 1982, 10TH P INT C EL MICR, P59
[4] COLLIEX C, 1984, ADV OPTICAL ELECTRON, V19
[5] Liu Z., UNPUB
[6] ELECTRON-DIFFRACTION STUDY OF THE STRUCTURE OF BORON-DOPED AND PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
LIU, ZQ
MCKENZIE, DR
COCKAYNE, DJH
DWARTE, DM
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1988, 57 (06): : 753 - 761
[7] ELECTRON-DIFFRACTION STUDY OF CHEMICAL ORDERING IN GLOW-DISCHARGE A-SI1-XCX-H
MCKENZIE, DR
SMITH, GB
LIU, ZQ
[J]. PHYSICAL REVIEW B, 1988, 37 (15): : 8875 - 8881
[8] BONDING IN A-SI1-XCX - H FILMS STUDIED BY ELECTRON-ENERGY LOSS NEAR EDGE STRUCTURE
MCKENZIE, DR
BERGER, SD
BROWN, LM
[J]. SOLID STATE COMMUNICATIONS, 1986, 59 (05) : 325 - 329
[9] NEAR-EDGE FINE-STRUCTURE ANALYSIS OF CORE-SHELL ELECTRONIC ABSORPTION EDGES IN SILICON AND ITS REFRACTORY COMPOUNDS WITH THE USE OF ELECTRON-ENERGY-LOSS MICROSPECTROSCOPY
SKIFF, WM
CARPENTER, RW
LIN, SH
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) : 2439 - 2449