ROOM-TEMPERATURE OBSERVATION OF MIDINFRARED INTERSUBBAND ABSORPTION ACTIVATED BY NEAR-INFRARED ILLUMINATION IN MULTIPLE QUANTUM-WELLS

被引：7

作者：

DELACOURT, D

PAPILLON, D

POCHOLLE, JP

SCHNELL, JP

PAPUCHON, M

机构：

[1] Thomson-CSF/LCR, Orsay 91404, Domaine de Corbeville

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 05期

关键词：

Infrared sources; Photoelectric devices;

D O I：

10.1049/el:19900184

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the near-infrared optical activation of intersubband transitions in a 250 period GaAs/Ga0.75Al0.25As multiple quantum well structure free from intentional doping (undoped). A 0.5% resonant absorption peak around 10.2μm has been observed at room temperature under a 320W/cm2 near-infrared illumination at 0.835μm. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：277 / 279

页数：3

共 5 条

[1] RECOMBINATION LIFETIME OF CARRIERS IN GAAS-GAALAS QUANTUM WELLS NEAR ROOM-TEMPERATURE
ARAKAWA, Y
SAKAKI, H
NISHIOKA, M
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KAMIYA, T
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (05) : 519 - 521
[2] CARRIER-ACTIVATED LIGHT-MODULATION
JOHNSON, NF
EHRENREICH, H
JONES, RV
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (03) : 180 - 181
[3] LEVINE BF, 1987, APPL PHYS LETT, V50, P253
[4] PHOTOINDUCED INTERSUBBAND ABSORPTION IN UNDOPED MULTI-QUANTUM-WELL STRUCTURES
OLSZAKIER, M
EHRENFREUND, E
COHEN, E
BAJAJ, J
SULLIVAN, GJ
[J]. PHYSICAL REVIEW LETTERS, 1989, 62 (25) : 2997 - 3000
[5] 1ST OBSERVATION OF AN EXTREMELY LARGE-DIPOLE INFRARED TRANSITION WITHIN THE CONDUCTION-BAND OF A GAAS QUANTUM WELL
WEST, LC
EGLASH, SJ
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1156 - 1158

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