SPONTANEOUS EMISSION FROM PLANAR MICROSTRUCTURES

The alteration of spontaneous emission characteristics in terms of the spontaneous lifetime and spectral emission characteristics are discussed for dipoles in the presence of nearby planar reflecting interfaces and cavities, specifically for the case of semiconductors. For dipoles closely spaced to absorbing metal mirrors, significant lifetime change is possible. Analysis and experimental data are presented for light emitting diodes. For dielectric Fabry-Perot microcavities, the expected lifetime change is small, but significant modification in the radiation Pattern of the emitted light occurs. It is shown that the spectral characteristics of emission have a sensitive dependence on the dipole location in the cavity. Comparison is made between a classical against a quantum treatment of the spontaneous emission modification due to the cavity.