GROWTH AND CHARACTERIZATION OF N-DOPED ZNSXSE1-X (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-0.3) BY MOLECULAR-BEAM EPITAXY

被引：15

作者：

TERAGUCHI, N

HIRATA, S

MOURI, H

TOMOMURA, Y

SUZUKI, A

TAKIGUCHI, H

机构：

[1] Central Research Laboratories, Corporate Research and Develop Center, Sharp Corporation, Tenri-shi, Nara, 632

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80050-M

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

N-doped p-type ZnSxSe1-x (0 less than or equal to x < 0.3) films were grown by molecular beam epitaxy (MBE) using radio-frequency (RF) plasma. The net acceptor concentration N-a-N-d decreased monotonically with increasing S composition and N-a- N-d of 2.5 x 10(17) cm(-3) was achieved for the ZnSxSe1-x film with S composition of 0.29, which has a bandgap energy of 3.0 eV at 77 K. The relative intensity of the I-1 peak (acceptor bound exciton) to DAP (donor-acceptor pair) emission increased with increasing S composition and the DAP emission became dominant with increasing temperature. From the temperature dependence of photoluminescence (PL) measurements, the activation energies of the N acceptor in ZnSxSe1-x were estimated. The activation energy increased with increasing S composition and was comparable to that of ZnMgSSe.

引用

页码：803 / 806

页数：4

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