J-J COUPLING AND LOCAL-FIELD EFFECTS ON N-N PAIR SPECTRA IN GAP

[1] [Anonymous], 1966, SEMICONDUCTORS SEMIM

[2] Bir GL., 1974, SYMMETRY STRAIN INDU

[3] ACCEPTOR-LIKE EXCITED S-STATES OF EXCITONS BOUND TO NITROGEN PAIRS IN GAP [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (23) : 1591 - 1594

[4] DEAN PJ, 1979, EXCITONS, P65

[5] ISOELECTRONIC DONORS AND ACCEPTORS [J]. PHYSICAL REVIEW LETTERS, 1966, 17 (06) : 312 - &

[6] DEFORMATION POTENTIALS OF THE DIRECT AND INDIRECT ABSORPTION EDGES OF GAP [J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2209 - 2223

[7] EFFECT OF UNIAXIAL-STRESS ON THE EXCITONIC MOLECULE BOUND TO NITROGEN TRAP IN GAP [J]. PHYSICAL REVIEW B, 1980, 22 (10) : 4710 - 4717

[8] STRESS DEPENDENCE OF THE NITROGEN-BOUND EXCITONS IN GAP-N [J]. PHYSICAL REVIEW B, 1980, 22 (10) : 4834 - 4848

[9] STRESS DEPENDENCE OF THE SULFUR-BOUND EXCITONS IN GAP [J]. PHYSICAL REVIEW B, 1979, 20 (10): : 4268 - 4277

[10] EXCITONIC MOLECULE BOUND TO ISOELECTRONIC NITROGEN TRAP IN GAP [J]. PHYSICAL REVIEW, 1969, 188 (03): : 1228 - &

[1] [Anonymous], 1966, SEMICONDUCTORS SEMIM

[2] Bir GL., 1974, SYMMETRY STRAIN INDU

[3] ACCEPTOR-LIKE EXCITED S-STATES OF EXCITONS BOUND TO NITROGEN PAIRS IN GAP [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (23) : 1591 - 1594

[4] DEAN PJ, 1979, EXCITONS, P65

[5] ISOELECTRONIC DONORS AND ACCEPTORS [J]. PHYSICAL REVIEW LETTERS, 1966, 17 (06) : 312 - &

[6] DEFORMATION POTENTIALS OF THE DIRECT AND INDIRECT ABSORPTION EDGES OF GAP [J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2209 - 2223

[7] EFFECT OF UNIAXIAL-STRESS ON THE EXCITONIC MOLECULE BOUND TO NITROGEN TRAP IN GAP [J]. PHYSICAL REVIEW B, 1980, 22 (10) : 4710 - 4717

[8] STRESS DEPENDENCE OF THE NITROGEN-BOUND EXCITONS IN GAP-N [J]. PHYSICAL REVIEW B, 1980, 22 (10) : 4834 - 4848

[9] STRESS DEPENDENCE OF THE SULFUR-BOUND EXCITONS IN GAP [J]. PHYSICAL REVIEW B, 1979, 20 (10): : 4268 - 4277

[10] EXCITONIC MOLECULE BOUND TO ISOELECTRONIC NITROGEN TRAP IN GAP [J]. PHYSICAL REVIEW, 1969, 188 (03): : 1228 - &