PREPARATION AND PROPERTIES OF A NEW GAAS SAWTOOTH DOPING SUPERLATTICE

被引：18

作者：

PLOOG, K

FISCHER, A

SCHUBERT, EF

机构：

来源：

SURFACE SCIENCE | 1986年 / 174卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90396-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：120 / 130

页数：11

共 11 条

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[6] THE USE OF SI AND BE IMPURITIES FOR NOVEL PERIODIC DOPING STRUCTURES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[7] COMPOSITIONAL AND DOPING SUPER-LATTICES IN III-V-SEMICONDUCTORS [J].

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[8]

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[9] GAAS SAW-TOOTH SUPERLATTICE LIGHT-EMITTING DIODE OPERATING MONOCHROMATICALLY AT "LAMBDA-GREATER-THAN-OR-EQUAL-TO-0.9 MU-M [J].

SCHUBERT, EF ;

FISCHER, A ;

PLOOG, K .

ELECTRONICS LETTERS, 1985, 21 (09) :411-412

[10] RADIATIVE ELECTRON-HOLE RECOMBINATION IN A NEW SAWTOOTH SEMICONDUCTOR SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].

SCHUBERT, EF ;

HORIKOSHI, Y ;

PLOOG, K .

PHYSICAL REVIEW B, 1985, 32 (02) :1085-1089

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