NEW OXYGEN RELATED SHALLOW THERMAL DONOR CENTERS IN CZOCHRALSKI-GROWN SILICON

被引：59

作者：

NAVARRO, H

GRIFFIN, J

WEBER, J

GENZEL, L

机构：

[1] Max-Planck-Inst fuer, festkoerperforschung, Stuttgart,, West Ger, Max-Planck-Inst fuer festkoerperforschung, Stuttgart, West Ger

来源：

SOLID STATE COMMUNICATIONS | 1986年 / 58卷 / 03期

关键词：

CRYSTALS; -; Growing;

D O I：

10.1016/0038-1098(86)90832-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A series of previously undetected effective-mass like oxygen related donor centers is observed in Czochralski-grown silicon (Cz-Si) by means of photothermal ionization spectroscopy. The new set of donors is shallower in energy than any of the known series of nine oxygen thermal donors reported in Cz-Si. The ionizaaton energies of the new set of donors are between 34. 7 and 37. 4 mev. The new donor centers also appear as a result of thermally annealing the samples at 450 degree C.

引用

页码：151 / 155

页数：5

共 19 条

[1] EXCITATION SPECTRA OF LITHIUM DONORS IN SILICON AND GERMANIUM [J].

AGGARWAL, RL ;

FISHER, P ;

MOURZINE, V ;

RAMDAS, AK .

PHYSICAL REVIEW, 1965, 138 (3A) :A882-&

[2] PHOTOELECTRIC SPECTROSCOPY OF INDIUM IN SILICON [J].

CHANDLER, TC ;

SPRY, RJ ;

BROWN, GJ ;

ROME, JJ ;

HARRIS, RJ .

PHYSICAL REVIEW B, 1982, 26 (12) :6588-6592

[3]

CLAWS P, 1982, SOLID STATE COMMUN, V44, P1011

[4] PHOTOCONDUCTIVE RESPONSE OF COMPENSATING IMPURITIES IN PHOTOTHERMAL IONIZATION SPECTROSCOPY OF HIGH-PURITY SILICON AND GERMANIUM [J].

DARKEN, LS ;

HYDER, SA .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :731-733

[5] HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1969, 184 (03) :713-&

[6] DOUBLE-BEAM FOURIER SPECTROSCOPY WITH 2 INPUTS AND 2 OUTPUTS [J].

GENZEL, L ;

CHANDRASEKHAR, HR ;

KUHL, J .

OPTICS COMMUNICATIONS, 1976, 18 (03) :381-386

[7] AN OPTICAL STUDY OF LITHIUM AND LITHIUM-OXYGEN COMPLEXES AS DONOR IMPURITIES IN SILICON [J].

GILMER, TE ;

FRANKS, RK ;

BELL, RJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (08) :1195-&

[8]

HALLER EE, 1985, 17TH P INT C PHYS SE, P679

[9]

HERRMANN H, 1975, ADV SOLID STATE PHYS, V25, P279

[10] HIGH-RESOLUTION STUDIES OF SULFUR-RELATED AND SELENIUM-RELATED DONOR CENTERS IN SILICON [J].

JANZEN, E ;

STEDMAN, R ;

GROSSMANN, G ;

GRIMMEISS, HG .

PHYSICAL REVIEW B, 1984, 29 (04) :1907-1918

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