LONG-LIFETIME HIGH-INTENSITY GAAS PHOTOSOURCE

被引：23

作者：

CALABRESE, R

CIULLO, G

GUIDI, V

LAMANNA, G

LENISA, P

MACIGSI, B

TECCHIO, L

YANG, B

机构：

[1] INFN,I-44100 FERRARA,ITALY

[2] LAB NAZL LEGNARO,I-35020 LEGNANO,ITALY

[3] UNIV BARI,DIPARTMENTO FIS,I-70125 BARI,ITALY

[4] INFN,I-70125 BARI,ITALY

[5] POLITECN MILAN,I-20100 MILAN,ITALY

[6] INFN,I-20100 MILAN,ITALY

[7] UNIV TORINO,DIPARTIMENTO FIS SPERIMENTALE,I-10125 TURIN,ITALY

[8] INFN,I-10125 TURIN,ITALY

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1994年 / 65卷 / 02期

关键词：

D O I：

10.1063/1.1145194

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We used a GaAs crystal operating in a negative electron affinity mode to produce an intense continuous electron beam by photoemission. The major drawback of photoemission from GaAs, i.e., rapid current decay, was overcome without continuously supplying cesium. After a little initial decay, the current remained constant at 1 mA over a few mm(2), with no degradation. Seasoning of the vacuum chamber played a fundamental role in achieving this performance.

引用

页码：343 / 348

页数：6

共 24 条

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